Topological optoelectronics in transition-metal dichalcogenides (基于过渡金属硫族化合物的拓扑光电器件)

报告人:Yijin Zhang  (Max Planck Institute in Stuttgart)


报告摘要:Group VI-B transition-metal dichalcogenides (MX2, M = Mo, W, X = S, Se, Te, abbreviation: TMDs) in the triangular prismatic phase are new class of semiconductors with a high potential for various application ranging from the conventional electronics and optics to the next generation information technologies such as spintronics and valleytronics. Their unique band structure as well as the valley-contrasting properties originates from the broken inversion symmetry in the individual layer. These features can be potentially utilized for novel functional applications.

The reduction of the dimensionality as well as the breaking of the symmetry is the key for the emergence of the fascinating properties in TMDs. From this point of view, further peculiar features can be anticipated in nanotubes of TMDs, since they have a lower dimensionality (quasi-one-dimension) and less number of symmetry operations than TMD monolayers.

We have been investigating the electronic and optical properties of TMDs in different crystal structures. Our motivation is to reveal the actual potential of TMDs and open the way towards practical applications. In my talk, I will start from a brief introduction to TMDs and then present several experimental results focusing on each peculiar property of TMDs.


报告人简介:Dr. Yijin Zhang performed his undergraduate study at the University of Tokyo in 2011, and received Ph.D. degree from the University of Tokyo in 2016. His Ph.D. study was supervised by Prof. Iwasa in the Department of Applied Physics. After his graduation until now, he receives the Research Fellowship for Young Scientists (SPD) from Japan Society for the Promotion of Science (JSPS). He is currently working at the Max Planck Institute in Stuttgart, Germany, in the research group led by Dr. Smet and in the department of Prof. von Klitzing. The main research target is the electrical transport and optical response of novel semiconductors including 2D materials.


星期一, 2018/10/29 - 10:30am to 12:00pm


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