裴艳丽

教授

职  称: 教授

学  位: 博士

毕业学校: 日本国立广岛大学

联系电话: 020-39943836

电子邮件: peiyanli@mail.sysu.edu.cn

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每年在微电子学与固体电子学、集成电路专业招收硕士和博士研究生,光学工程招收硕士研究生,欢迎感兴趣的同学加入我的团队!也欢迎各位同学前来实验室参观、体验!

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教育经历: 

2017年1月-至今 中山大学电子与信息工程学院 教授 博导

2016年1月-2016年12月 中山大学电子与信息工程学院 副教授 硕士生导师

2011年5月-2015年12月 中山大学理工学院 副教授 硕士生导师

2007年4月-2011年4月 日本东北大学 助理教授

2007年1月-2007年3月 日本东北大学 博士研究员

2003年10月-2006年12月 日本广岛大学 博士研究生

2000年9月-2003年7月 浙江大学 硕士研究生

1996年9月-2000年7月 浙江大学 本科

授课课程: 

大学物理、大学物理实验、线性代数、 集成电路制造技术 、 透明电子材料与器件 、光学工程实验方法与技术等

研究方向: 

1.基于氧化物半导体的电子器件(高性能薄膜晶体管、可印刷电子器件、传感器件等)

2.非挥发存储器件(高密度非挥发存储器件,柔性透明非挥发存储器件等)

3. 神经形态突触/神经元器件及电路

4.柔性透明电路技术

科研项目: 

1. 国家自然科学基金面上项目:高迁移率MOCVD微晶氧化铟薄膜晶体管及可靠性研究,主持 ,在研(63万)

2. 广东省科技计划项目产学研合作项目:下一代新型氧化物透明导电薄膜触摸面板关键技术开发及产业化,主持,在研(100万)

3. 企业委托项目:采用MOCVD技术的移动终端用玻璃面板高硬镀膜技术开发,主持,在研(150万)

4. 广东省科技厅科技计划项目广东省应用型科技研发专项:新型氧化物半导体透明电极结构AlGaInP基红光LED芯片关键技术研发及其产业化,第二负责人 ,在研(500万)

5. 广州市科技计划项目:高迁移率、高稳定性全透明氧化物薄膜晶体管(TOS-TFT)有源层关键问题研究,第二负责人,在研(150万)

代表性科研成果: 

1.书籍著作

1)Yanli Pei, “Wafer Level Reliability of Advanced CMOS Devices and Processes”, Chapter 7 : Reliability of High-k Gate Dielectrics, Nova Science Publisher, Inc. 2008.

2)田中徹, 裴艳丽,“次世代半導体メモリーの最新技術”,第6章:その他のメモリー最新技術 (286-296), シーエムシー出版. 2009年2月.

2. 主要学术论文

1)Xiaoci Liang, Chengcai Wang, Jun Liang, Chuan Liu, and Yanli Pei*, “Efficient Defect Engineering for Solution Combustion Processed In-Zn-O thin films for high performance transistors”, Semicond. Sci. Technol., Vol. 32, 095010, 2017.

2)Ya Li, Chuan Liu, Gang Wang, and Yanli Pei*, “Investigation of solution combustion processed nickel oxide p-channel thin film transistors”, Semicond. Sci. Technol. 32, 085004(9pp), 2017 (July).

3)Jiayong Lin, Yanli Pei*, Yi Zhuo, Xuejin Ma, and Gang Wang*, “AlGaInP-based LEDs with Al-doped ZnO Transparent Conductive Layer Grown by MOCVD”, IEEE Trans. Electron Dev., Vol.64, p99(1-4), 2017.

4)Lei Qiang, Wuguang Liu, Yanli Pei*, Gang Wang*, and Ruohe Yao,“Trap states extraction of p-channel SnO thin-film transistors based on percolation and multiple trapping carrier conductions”, Solid-State Electronics,Vol. 129, pp. 163-167, 2017.

5)Jiayong Lin, Yanli Pei*, Yi Zhuo, Zimin Chen, Ruiqin Hu, Guangshuo Cai, and Gang Wang*, “High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer”, Chin. Phys. B, 25(11), 2016, pp. 118506 (4pp).

6)Yanli Pei*, Wuguang Liu, Jingtao Shi, Zimin Chen*, and Gang Wang, “Fabrication and Characterization of p-Type SnO Thin Film with High c-Axis Preferred Orientation”, Journal of Electronic Materials 45, No.11, pp. 5967-5973, 2016.

7)Yanli Pei, Ruihan Pei, Xiaoci Liang, Yuhao Wang, Ling Liu, Haibiao Chen, Jun Liang, “CdS-Nanowires Flexible Photo-detector with Ag-Nanowires Electrode Based on Non-transfer Process”, Scientific Reports 6, 21551, DOI:10.1038/srep21551, (2016).

8)R. Hu, Y. Pei, Z. Chen, J. Yang, Y. Li, J. Lin, Y. Zhao, C. Wang, J. Liang, B. Fan, and G. Wang, “Ultra-High Field-Effect Mobility Thin-Film Transistors with Metal-Organic Chemical Vapor Deposition Grown In2O3 Channel Treated by Oxygen Microwave Plasma”, IEEE Electron Device Letters, Vol.36, 1163-1165, 2015.

9)Xiaobo Chen, Yu Gu, Guohua Tao, Yanli Pei, Guangjin Wang, and Ni Cui, “Origin of ydrogen evolution activity on MS2 (M=Mo or Nb) monolayers”, J. Mater. Chem. A, Vol. 3, 18898-18905, 2015.

10)Jingchuan Yang, Yanli Pei, Bingfeng Fan, Shanjin Huang, Zimin Chen, Cunsheng Tong, Hongtai Luo, Jun Liang, and Gang Wang, “GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by MOCVD: Ultralow Forward Voltage and Highly Uniformity”, IEEE Electron Device Letters, Vol. 36, pp. 372-374, 2015.

11)Ya Li, Yanli Pei, Ruiqin Hu, Zimin Chen, Yiqiang Ni, Jiayong Lin, Yiting Chen, Xiaoke Zhang, Zhen Shen, Jun Liang, Binfeng Fan, Gang Wang, and He Duan, “Charge Trapping Memory Characteristics of Amorphous-Indium-Gallium-Zinc Oxide Thin Film Transistors With Defects Engineered Alumina Dielectric”, IEEE Trans. Electron Dev. Vol. 62, No. 4, pp. 1184-1188, 2015.

12)Yanli Pei, Biaoren Mai, Xiaoke Zhang, Ruiqin Hu, Ya Li, Zimin Chen, Bingfeng Fan, Jun Liang*, and Gang Wang, “Performance Improvement of Amorphous Indium-Gallium-Zinc Oxide ReRAM with SiO2 Inserting Layer”, Current Applied Physics, 2015, Vol. 15, 441-445.

13)Yanli Pei, Biaoren Mai, Xiaoke Zhang, Ruiqin Hu, Ya Li, Zimin Chen, Bingfeng Fan, Jun Liang, and Gang Wang, “Forming Free Bipolar ReRAM of Ag/a-IGZO/Pt with Improved Resistive Switching Uniformity Through Controlling Oxygen Partial Pressure”, Journal of Electronic Materials, Vol. 44, No. 2 (2015), Page 645-650.

14)Ruiqin Hu, Yanli Pei, Zimin Chen, Jingchuan Yang, Jiayong Lin, Ya Li, Bingfeng Fan, and Gang Wang , “Correlation between Grain Orientation and Carrier Concentration of Poly-crystalline In2O3 Thin Film Grown by MOCVD”, Journal of Materials Science: Volume 50, Issue 3 (2015), Page 1058-1064.

15)Y. Li, Y. L. Pei, R. Q. Hu, Z. M. Chen, Y. Zhao, Z Shen, B. F. Fan, J. Liang, G. Wang, “Effect of channel thickness on electrical performance of amorphous IGZO thin-film transistor with atomic layer deposited alumina oxide dielectric”, Current Applied Physics 2014, 14, pp. 941-945.

16)Jingchuan Yang, Yanli Pei,  Ruiqing Hu, Bingfeng Fan, Cunsheng Tong, Toshiya Kojima, Zhisheng Wu,  Hao Jiang, and Gang Wang,”Morphology controlled synthesis of crystalline ZnO film by MOCVD: from hexagon to rhombus”, CrystEngComm, 2012, 14, pp.8345–8348.

17)Yanli Pei, Chengkuan Yin, Toshiya Kojima, Ji-Cheol Bea, Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi, “MOSFET Nonvolatile Memory with High-Density Cobalt Nanodots Floating Gate and HfO2 High-k Blocking Dielectric”, IEEE Transactions on Nanotechnology 10, pp.528-531, 2011.

18)Yanli Pei, Toshiya Kojima, Tatsuro Hiraki, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi, “Investigation of Effects of Post-Deposition Annealing on Cobalt Nanodots Embedded in Silica for Nonvolatile Memory Application”, Jpn. J. Appl. Phys. 49, pp. 066503-1-066503-4, 2010.

19)Yanli Pei, Chengkuan Yin, Toshiya Kojima, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi, “Memory Characteristics of Metal-Oxide-Semiconductor Capacitor with High Density Cobalt Nanodots Floating Gate and HfO2 Blocking Dielectric”, Appl. Phys. Lett. 95, pp. 033118, 2009.

20)Y Pei, C Yin, J C Bea, H Kino, T Fukushima, T Tanaka, and M Koyanagi, “MOSFET Nonvolatile Memory with High Density Tungsten Nanodots Floating Gate Formed by Self-Assembled Nanodot Deposition”, Semicond. Sci. Technol. 24, pp. 045022, 2009.

21)Yanli Pei, Chengkuan Yin, Masahiko Nishijima, Toshiya Kojima, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi, “Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application”, Appl. Phys. Lett. 94, pp. 063108, 2009.

22)Yanli Pei, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi, “Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride”, Appl. Phys. Lett. 93, pp. 113115-113117, 2008.

23)Yanli Pei, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi, “Electrical Characterization of Metal-Oxide-Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots”, Jpn. J. Appl. Phys. 47, pp. 2680-2683, 2008.

3. 授权专利

1) 裴艳丽,范冰丰,王钢,背电极结构的ZnO基全透明非挥发存储器及制备方法,发明专利申请号:201110380922.6

2)裴艳丽,吴锦璧,江灏, 一种ZnO-TCL半导体发光器件及其制造方法,发明专利申请号:201210170799.X

3)裴艳丽,梁军,裴宇波,一种碲化镉薄膜电池及其制备方法,发明专利申请号:201210252117.X

4)裴艳丽,梁军,一种新型石墨烯材料及其器件的制备方法,发明专利号:201410059763.3

通讯地址:广东省广州市大学城外环东路132号
邮政编码:510006

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