江灏

博士生导师

电话：020-39336570

招生方向

光学工程  0803 （硕士、博士）

微电子学与固体电子学 080903（硕士、博士）

研究组：

由心所至！

“III族氮化物光电材料与探测”研究组

教育经历

名古屋工业大学 工学硕士、博士

授课课程

本科课程：《微电子材料》、

硕士课程：《半导体外延技术》、《半导体光电探测技术》、《光学工程实验与方法》、《光学工程进展》

研究方向

宽禁带半导体材料与器件：

材料外延生长——

（1）高Al组分AlGaN外延生长机制、方法及特性研究

（2）InGaN外延生长机制、方法及特性研究

器件设计与制作——

（1）高灵敏AlGaN紫外光电探测的器件物理、模拟仿真、结构设计与工艺技术研究

（2）高量子效率InGaN可见光探测器的物理、仿真设计及工艺研究

科研项目

先后主持了国家自然基金面上项目、国家“863计划”创新课题、广东省节能减排重大科技专项课题、粤港投标项目、国家“973计划”课题、广东省可见光通信技术及标准光组件重大专项等项目。

在研项目：

2021 广州市重点领域研发计划“新材料”重大科技专项

2019 广东省“第三代半导体材料与器件”重大专项

2016 国家自然基金重点项目

2016“战略性先进电子材料”国家重点研发向项目

近期科研成果

Zhuoya Peng, Zesheng Lv, Shouqiang Yang, Yv Yin, Jiabing Lu, and Hao Jiang*,"High-Sensitivity Solar-Blind UV Phototransistor with Binary AlN/GaN Interface-Layer-Engineered AlGaN Heterojunction",IEEE Electron Device Letters, xx(11), xx (2025).

Zesheng Lv, Zhuoya Peng, Mian Wu, Yv Yin, Mengyao Song, and Hao Jiang*, "Janus-Faced Carrier Localization with Defect States: A Case Study in InGaN-Based Photodetector", ACS Photonics, 12(8), 4460-4469 (2025).

Zhuoya Peng, Jiabing Lu, Zesheng Lv, and Hao Jiang*,"Overcoming solar-blind limitations: 3DEG-induced Fermi-level control in AlGaN phototransistors enables 10^7 out-of-band rejection and 650-photons/s detection", Optics Express, 33(12), 24937-24948 (2025).

Zesheng Lv,1 ZhuoyaPeng, YvYin, KeqiLiu, Shouqiang Yang, Gang Wang, and Hao Jiang*,"Epitaxial strain reconfiguration of AlGaN multiple heterojunctions for high-responsivity high-speed UV detection", Appl. Phys. Lett. 126, 242106 (2025).

Z Peng, S Yang, X Xie, M Wu, Z Lv, J Lu, and H Jiang*, "Boosting AlGaN solar-blind ultraviolet phototransistor performance via Stoichiometry-Tailored In-Situ SiNx passivation", Appl. Surf. Sci. 703, 163416 (2025).

Zesheng Lv, Supeng Zhang, Gang Wang,  and Hao Jiang*, "Space and Time Domain Transport Modulation by InGaN/GaN Single-Carrier Superlattices for High-Performance UV-Blue Photodetection", ACS Photonics, 12(2), 776–785 (2025).

Zesheng Lv, Haoming Xu, Zhuoya Peng, Tianzhi Peng, Gang Wang, and Hao Jiang*, "Ultrasensitive self-filtering visible-light phototransistor using InGaN/GaN single-carrier superlattices and polarization depletion", Optics Express, 33(4), 7195 (2025).

Zesheng Lv, TianzhiPeng, GangWang, and Hao Jiang*, "Substantial improvement of InGaN/GaN visible-light polarization-induced self-depletion phototransistor by thermally oxidized Al2O3", Appl. Phys. Lett. 125, 191104 (2024).

Zhuoya Peng; Mian Wu; Zesheng Lv; Shouqiang Yang; Mengyao Song; Yv Yin, Hao Jiang*, "Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors Via In-situ SiNx",IEEE Electron Device Letters, 45(11), 2074 - 2077 (2024).

Zesheng Lv, Supeng Zhang, Hao Jiang*,"Superhigh Gain and High Speed InGaN/GaN Visible-light Photodetector using Polarization Heterointerface Barrier and Single-carrier Superlattices", Optics Express 32(12) 22045-22051 (2024).

Zesheng Lv, Quan Wen, Yezhang Fang, Zhuoya Peng, Hao Jiang*,"Highly Sensitive Narrowband AlGaN Solar Blind  Ultraviolet Photodetectors Using Polarization Induced Heterojunction Barrier ",  IEEE Electron Device Letters, 45(4), 550 - 553 (2024).

Jiabing Lu and Hao Jiang*,"High-Temperature Operation of Al0.5Ga0.5N/AlN Solar-Blind Phototransistor With Built-In Polarization Photogate", IEEE Electron Device Letters, 44(9),1524-1527 (2023). DOI: 10.1109/LED.2023.3298359

Jiabing Lu, Zesheng Lv, and Hao Jiang*, "AlGaN solar-blind phototransistor capable of directly detecting sub-fW signals: self-depletion and photorecovery of full-channel 2DEG enabled by a quasi-pseudomorphic structure", Photonics Res. 11 (7), 1217 (2023).  https://doi.org/10.1364/PRJ.489960

Zesheng Lv; Jiabing Lu; Haoming Xu; Tianzhi Peng; Quan wen; Gang Wang; Hao Jiang*, "High performance InGaN/GaN visible-light field effect phototransistor using polarization induced virtual photogate", Appl. Phys. Lett. 123, 051103 (2023) https://doi.org/10.1063/5.0155109

Zesheng Lv, Yezhang Fang, Zhongkun Liao, Hailong Wang, Cairong Ding, Hao Jiang*, "Controlling metal adatoms on InGaN growing front for defect suppression and high-stability visible-light photodetection", J. Alloy. Comp. 942, 16899 (2023).  https://doi.org/10.1016/j.jallcom.2023.168991

Quan Wen, Zesheng Lv, Shiquan Lai, Leyi Li, Hao Jiang*, "High performance foreign-dopant-free ZnO/AlxGa1−xN ultraviolet phototransistors using atomic-layer-deposited ZnO emitter layer", J. Alloy. Comp. 937, 168433 (2023). https://doi.org/10.1016/j.jallcom.2022.168433

 Jiabing Lu, Zesheng Lv, Xinjia Qiu, Shiquan Lai, Hao Jiang*, "Ultrasensitive and high-speed AlGaN/AlN solar-blind ultraviolet photodetector: a full-channel-self-depleted phototransistor by a virtual photogate", Photonics Res. 10 (9), 2229 (2022). DOI:10.1364/PRJ.467689

Quan Wen, Chupei Wang, Xinjia Qiu, Zesheng Lv, and Hao Jiang*, "Significant performance improvement of AlGaN solar-blind heterojunction phototransistors by using Na2S solution based surface treatment", Appl. Surf. Sci. 591, 153144 (2022).  https://doi.org/10.1016/j.apsusc.2022.153144

Kai Wang, Xinjia Qiu, Zhiyuan Song, Zesheng Lv, and Hao Jiang*, "Ultrahigh detectivity, high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect", Photonics Res. 10, 111 (2022).  https://doi.org/10.1364/PRJ.444444

Zesheng Lv , Yao Guo , Supeng Zhang , Quan Wen and Hao Jiang*, "Polarization engineered InGaN/GaN Visible-light photodiodes featuring high responsivity, bandpass response, and high speed", J. Mater. Chem. C, 9, 12273 (2021). DOI: 10.1039/d1tc01193f

Zesheng Lv, Hailong Wang, and Hao Jiang*,“Surface Evolution of Thick InGaN Epilayers with Growth Interruption Time", J. Phys. Chem. C , 125, 16643-16651 (2021).  https://doi.org/10.1021/acs.jpcc.0c11414

Zesheng Lv, Zhongkun Liao, Hao Jiang*,“InGaN/GaN Visible-light Heterojunction Phototransistor Featuring High responsivity, High speed, and Bias-controlled Wavelength-selectivity”, IEEE Electron Device Letters,  vol. 42, no. 9, pp. 1362-1365 (2021). Doi: 10.1109/LED.2021.3097048

Xinjia Qiu and Hao Jiang*, "Highly Conductive and 260 nm Transparent p‑Type Al0.6Ga0.4N Achieved Utilizing Interface Doping Effect”, Crystal Growth & Design, 21(4), 2389-2397 (2021).  https://doi.org/10.1021/acs.cgd.1c00020

Quan Wen, Shaoji Tang, and Hao Jiang*,"Efficient surface passivation using two-step ammonium sulfide based treatment for GaN/AlGaN heterojunction phototransistors", J. Appl. Phys. 129, 045702 (2021).

Xinjia Qiu, Yingda Chen, Enze Han, Zesheng Lv, Zhiyuan Song and Hao Jiang*,"High doping efficiency in p-type Al-rich AlGaN by modifying the Mg doping planes", Materials Advances, 1(1), 77-85 (2020).

Lijie Sun , Zesheng Lv, Zhenhua Zhang, Xinjia Qiu, and Hao Jiang*, "High-Performance AlGaN Heterojunction Phototransistor With Dopant-Free Polarization-Doped P-base", IEEE Electron Device Letters, 41(3),325-328 (2020). Doi: 10.1109/LED.2020.2966917.

Xinjia Qiu, Zhiyuan Song, Lijie Sun,  Zhenhua Zhang, Zesheng Lv, Quan Wen, Hao Jiang*, "High‑gain AlGaN/GaN visible‑blind avalanche heterojunction phototransistors", J Mater Sci: Mater Electron 31, 652–657 (2020).