吕泽升

2022年获工学博士学位，2025年起任中山大学电子与信息工程学院（微电子学院）副教授

研究方向：氮化物、氧化物等宽禁带半导体材料与器件；紫外-可见 多波段光电探测与集成

所属团队：“III族氮化物光电材料与探测”研究组；化合物半导体平台

欢迎光电、微电子、物理等专业的研究生、本科生，及相关研究者的交流与加入！

教育工作经历

2025.11 至今         中山大学，副教授

2022.07-2025.07  中山大学，光学工程，博士后

2017.08-2022.06  中山大学，微电子学与固体电子学，博士

2013.08-2017.06  中山大学，物理学，本科

研究方向

• 宽禁带半导体材料：GaN基、AlN基半导体的MOCVD外延；氧化物/氮化物异质生长与集成；
• 高性能光电探测：高灵敏、高速紫外-可见光探测及其应用；
• 多波段探测与成像：无滤波紫外辐照检测与成像；颜色分辨探测器及其成像。

学术兼职

• Electronics 客座编辑；
• Photonics Research, Applied Physics Letters, Optics Express 等期刊审稿人

科研项目

• 国家自然科学基金-青年科学基金项目，2024.01-2026.12，主持，面向高增益、高速、波长选择InGaN可见光探测器的缺陷抑制与增益结构研究；
• 广东省自然科学基金-面上项目，2025.01-2027.12，主持，基于Ⅲ族氮化物极化异质结的单器件紫外-可见多色分辨探测研究；
• 广东省自然科学基金-面上项目，2024.01-2026.12，主持，基于InGaN/GaN异质结极化势垒的高灵敏高速紫外-可见光探测及双色分辨研究；
• 中山大学-青年教师培育项目，2024.01-2024.12，主持，基于氮化物异质结极化自建势垒的紫外-可见光波长分辨探测研究；
• 技术开发项目（横向），2025.06-2026.05，主持，基于蓝绿光 LED 架构的高响应探测器设计；
• 国家重点研发计划，2022.11-2025.10，参与，高灵敏深紫外探测新机制及可靠性评测。
   

代表成果

当前工作聚焦宽禁带半导体及对应的紫外-可见波段光电探测，包含材料生长与缺陷机制、光电探测新原理新结构、探测器新功能新应用。近五年在ACS Photonics, Photonics Research, Optics Express, Applied Physics Letters, IEEE Electron Devices Letters等SCI期刊发表论文30余篇；获领域内发明专利授权10余项。

代表性论文： 
1. Zesheng Lv, Zhuoya Peng, Mian Wu, Yv Yin, Mengyao Song, and Hao Jiang*, Janus-faced Carrier Localization with Defect States: A Case Study in InGaN-Based Photodetectors， ACS Photonics, 2025, 12, 4460;
2. Zesheng Lv, Zhuoya Peng, Yv Yin, Keqi Liu, Shouqiang Yang, Gang Wang, and Hao Jiang*, Epitaxial strain reconfiguration of AlGaN multiple heterojunctions for high-responsivity high-speed UV detection, Applied Physics Letters, 2025, 126, 242106;
3. Zesheng Lv, Supeng Zhang, Gang Wang, and Hao Jiang*，Space and time domain transport modulation by InGaN/GaN single-Carrier superlattices for high-Performance UV-Blue photodetection, ACS Photonics, 2025, 12, 776-785;
4. Zesheng Lv, Haoming Xu, Zhuoya Peng, Tianzhi Peng, Gang Wang, and Hao Jiang*, Ultrasensitive self-filtering visible-light phototransistor using InGaN/GaN single-carrier superlattices and polarization depletion, Optics Express, 2025, 33, 7195-7204;
5. Zhuoya Peng#, Zesheng Lv#, Shouqiang Yang, Yv Yin, Jiabing Lu, and Hao Jiang*,  High-Sensitivity Solar-Blind UV Phototransistor With Binary AlN/GaN Interface-Layer-Engineered AlGaN Heterojunction, 2025, 46, 1725;
6. Zhuoya Peng#, Jiabing Lu#, Zesheng Lv#, and Hao Jiang*, Overcoming solar-blind limitations: 3DEG-induced Fermi-level control in AlGaN phototransistors enables 107 out-of-band rejection and 650-photons/s detection, Optics Express, 2025, 33; 24937-24948;
7. Zesheng Lv, Tianzhi Peng, Gang Wang, and Hao Jiang*, Substantial improvement of InGaN/GaN visible-light polarization-induced self-depletion phototransistor by thermally oxidized Al2O3, Applied Physics Letters, 2024, 125, 191104;
8. Zesheng Lv, Supeng Zhang, and Hao Jiang*, Superhigh gain InGaN/GaN visible-light photodetector using polarization heterointerface barrier and single-carrier superlattices, Optics Express, 2024, 32, 22045-22051;
9. Zesheng Lv, Quan Wen, Yezhang Fang, Zhuoya Peng, and Hao Jiang*, Highly sensitive narrowband AlGaN solar blind Ultraviolet photodetectors using polarization induced heterojunction barrier, IEEE Electron Device Letters, 2024, 45, 550-553;
10. Jiabing Lu#, Zesheng Lv#, and Hao Jiang*, AlGaN solar-blind phototransistor capable of directly detecting sub-fW signal: self-depletion and photorecovery of full-channel 2DEG enabled by a quasi-pseudomorphic structure, Photonics Research, 2023, 11, 1217-1226;
11. Zesheng Lv #, Jiabing Lu #, Haoming Xu, Tianzhi Peng, Quan Wen, Gang Wang, and Hao Jiang*, High performance InGaN/GaN visible-light field effect phototransistor using polarization induced virtual photogate; Applied Physics Letters, 2023, 123, 051103;
12. Zesheng Lv, Yezhang Fang, Zhongkun Liao, Hailong Wang, Cairong Ding, Hao Jiang*, Controlling metal adatoms on InGaN growing front for defect suppression and high-stability visible-light photodetection, Journal of Alloys and Compounds, 2023, 942, 168991;
13. Zesheng Lv, Supeng Zhang, Gang Wang and Hao Jiang*, An ultrahigh performance InGaN/GaN visible-light phototransducer based on polarization induced heterointerface barrier and minority carrier localization, Journal of Materials Chemistry C, 2023, 11, 5281-5289;
14. Zesheng Lv, Yao Guo, Supeng Zhang, Quan wen, and Hao Jiang*, Polarization engineered InGaN/GaN visible-light photodiodes featuring high responsivity, bandpass response, and high speed, Journal of Materials Chemistry C, 2021, 9, 12273-12280;
15. Zesheng Lv, Zhongkun Liao, and Hao Jiang*, InGaN/GaN Visible-Light Heterojunction Phototransistor Featuring High Responsivity, High Speed, and Bias Controlled Wavelength-Selectivity, IEEE Electron Devices Letters, 2021, 42, 1362-1365; 
16. Zesheng Lv, Hailong Wang, and Hao Jiang*, Surface Evolution of Thick InGaN Epilayers with Growth Interruption Time, Journal of Physical Chemistry C, 2021, 125, 16643-16651;